The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.
Features:
■TYPICAL RDS(on) = 12Ω ■EXTREMELY HIGH dv/dt CAPABILITY■100% AVALANCHE TESTED■NEW HIGH VOLTAGE BENCHMARK■GATE CHARGE MINIMIZED
(Absolute) Maximum Ratings:
Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS = 0)
600
V
VDGR
Drain-gate Voltage (RGS = 20 k Ω)
600
V
VGS
Gate- source Voltage
± 30
V
ID
Drain Current (continuos) at TC = 25℃
0.3
A
ID
Drain Current (continuos) at TC = 100℃
0.18
A
IDM(●)
Drain Current (pulsed)
1.2
A
PTOT
Total Dissipation at TC = 25℃
2.5
W
Derating Factor
0.02
W/℃
dv/dt (1)
Peak Diode Recovery voltage slope
3
V/ns
Tstg
Storage Temperature
–65 to 150
℃
Tj
Max. Operating Junction Temperature
150
℃
(•)Pulse width limited by safe operating area (1)ISD ≤ 12 A, di/dt ≤ 200 A/μs, VDD ≤ V(BR)DSS, Tj ≤TJMAX
Applications:
■AC ADAPTORS AND BATTERY CHARGERS■ SWITH MODE POWER SUPPLIES (SMPS)